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	Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment
	Wu, Zhengyuan[1]; Shen, Xiyang[2]; Xiong, Huan[3]; Li, Qingfei[4]; Kang, Junyong[5]; Fang, Zhilai[6]; Lin, Feng[7]; Yang, Bilan[8]; Lin, Shilin[9]; Shen, Wenzhong[10]
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2016
卷号	122页码:1-10
ISSN号	0947-8396
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2235667
专题	上海大学
作者单位	1.[1]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 2.[2]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 3.[3]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 4.[4]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 5.[5]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 6.[6]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 7.[7]Sanan Optoelect Co Ltd, Xiamen 361009, Peoples R China. 8.[8]Sanan Optoelect Co Ltd, Xiamen 361009, Peoples R China. 9.[9]Sanan Optoelect Co Ltd, Xiamen 361009, Peoples R China. 10.[10]Shanghai Jiao Tong Univ, Dept Phys, Minist Educ, Key Lab Artificial Struct & Quantum Control, Shanghai 200240, Peoples R China.
推荐引用方式 GB/T 7714	Wu, Zhengyuan[1],Shen, Xiyang[2],Xiong, Huan[3],et al. Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2016,122:1-10.
APA	Wu, Zhengyuan[1].,Shen, Xiyang[2].,Xiong, Huan[3].,Li, Qingfei[4].,Kang, Junyong[5].,...&Zhang, Tong-Yi[11].(2016).Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,122,1-10.
MLA	Wu, Zhengyuan[1],et al."Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 122(2016):1-10.

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