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Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs
Wen Jiao[1]; Liu Qiang[2]; Liu Chang[3]; Wang Yize[4]; Zhang Bo[5]; Xue Zhongying[6]; Di Zengfeng[7]; Yu Wenjie[8]; Zhao Qingtai[9]
刊名JOURNAL OF SEMICONDUCTORS
2016
卷号37
关键词SiGe quantum-well hole mobility Coulomb scattering
ISSN号1674-4926
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2234194
专题上海大学
作者单位1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
3.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
4.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
5.[3]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
6.[4]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
7.[5]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
8.[6]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
9.[7]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
10.[8]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
推荐引用方式
GB/T 7714
Wen Jiao[1],Liu Qiang[2],Liu Chang[3],et al. Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs[J]. JOURNAL OF SEMICONDUCTORS,2016,37.
APA Wen Jiao[1].,Liu Qiang[2].,Liu Chang[3].,Wang Yize[4].,Zhang Bo[5].,...&Zhao Qingtai[9].(2016).Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs.JOURNAL OF SEMICONDUCTORS,37.
MLA Wen Jiao[1],et al."Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs".JOURNAL OF SEMICONDUCTORS 37(2016).
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