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	Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
	Wen, Jiao[1]; Liu, Qiang[2]; Liu, Chang[3]; Wang, Yize[4]; Zhang, Bo[5]; Xue, Zhongying[6]; Di, Zengfeng[7]; Min, Jiahua[8]; Yu, Wenjie[9]; Liu, Xinke[10]
刊名	MICROELECTRONIC ENGINEERING
	2016
卷号	163页码:115-118
关键词	SiGe Quantum-well Ion-sensitive field-effect transistor Voltage sensitivity
ISSN号	0167-9317
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2233440
专题	上海大学
作者单位	1.[1]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 2.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[2]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 4.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[3]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 6.[4]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 7.[5]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 8.[6]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 9.[7]Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 10.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Wen, Jiao[1],Liu, Qiang[2],Liu, Chang[3],et al. Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity[J]. MICROELECTRONIC ENGINEERING,2016,163:115-118.
APA	Wen, Jiao[1].,Liu, Qiang[2].,Liu, Chang[3].,Wang, Yize[4].,Zhang, Bo[5].,...&Zhao, Qing-Tai[12].(2016).Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity.MICROELECTRONIC ENGINEERING,163,115-118.
MLA	Wen, Jiao[1],et al."Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity".MICROELECTRONIC ENGINEERING 163(2016):115-118.

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