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	High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature (EI收录SCI收录)
	Tian, Yu[1]; Han, Dedong[1]; Zhang, Suoming[1,2]; Huang, Fuqing[1,2]; Shan, Dongfang[1,2]; Cong, Yingying[1]; Cai, Jian[1,2]; Wang, Liangliang[1,2]; Zhang, Shengdong[1,2]; Zhang, Xing[1]
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2014
卷号	53
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2217095
专题	华南理工大学
作者单位	1.[1]Peking Univ, Inst Microelect, Beijing 100871, Peoples R China 2.[2]Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Tian, Yu[1],Han, Dedong[1],Zhang, Suoming[1,2],等. High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature (EI收录SCI收录)[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53.
APA	Tian, Yu[1].,Han, Dedong[1].,Zhang, Suoming[1,2].,Huang, Fuqing[1,2].,Shan, Dongfang[1,2].,...&Wang, Yi[1].(2014).High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature (EI收录SCI收录).JAPANESE JOURNAL OF APPLIED PHYSICS,53.
MLA	Tian, Yu[1],et al."High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature (EI收录SCI收录)".JAPANESE JOURNAL OF APPLIED PHYSICS 53(2014).

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