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Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI
X. Luo; Y. K. Fu; Y. Sun
刊名Journal of Applied Physics
2019
卷号Vol.125 No.5页码:053901
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2205733
专题安徽大学
作者单位1.State Key Laboratory of Mining Disaster Prevention and Control Co-founded by Shandong Province and the Ministry of Science and Technology, Shandong University of Science and Technology, Qingdao 266590, China
2.Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
3.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China a) Authors to whom correspondence should be addressed: yansun@ahu.com.cn and xluo@issp.ac.cn
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X. Luo,Y. K. Fu,Y. Sun. Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI[J]. Journal of Applied Physics,2019,Vol.125 No.5:053901.
APA X. Luo,Y. K. Fu,&Y. Sun.(2019).Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI.Journal of Applied Physics,Vol.125 No.5,053901.
MLA X. Luo,et al."Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI".Journal of Applied Physics Vol.125 No.5(2019):053901.
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