Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI | |
X. Luo; Y. K. Fu; Y. Sun | |
刊名 | Journal of Applied Physics |
2019 | |
卷号 | Vol.125 No.5页码:053901 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2205733 |
专题 | 安徽大学 |
作者单位 | 1.State Key Laboratory of Mining Disaster Prevention and Control Co-founded by Shandong Province and the Ministry of Science and Technology, Shandong University of Science and Technology, Qingdao 266590, China 2.Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China 3.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China a) Authors to whom correspondence should be addressed: yansun@ahu.com.cn and xluo@issp.ac.cn |
推荐引用方式 GB/T 7714 | X. Luo,Y. K. Fu,Y. Sun. Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI[J]. Journal of Applied Physics,2019,Vol.125 No.5:053901. |
APA | X. Luo,Y. K. Fu,&Y. Sun.(2019).Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI.Journal of Applied Physics,Vol.125 No.5,053901. |
MLA | X. Luo,et al."Magnetic entropy scaling in two-dimensional intrinsically ferromagnetic semiconductor CrI".Journal of Applied Physics Vol.125 No.5(2019):053901. |
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