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	SiGe/h-BN heterostructure with inspired electronic and optical properties: A first-principles study (EI收录)
	Chen, Xianping[1,2]; Sun, Xiang[1,2]; Yang, D.G.[2]; Meng, Ruishen[1]; Tan, Chunjian[1]; Yang, Qun[1]; Liang, Qiuhua[2]; Jiang, Junke[2]
刊名	Journal of Materials Chemistry C
	2016
卷号	4页码:10082-10089
关键词	Binding energy Calculations Density functional theory Electric fields Electronic properties Energy gap Microelectronics Monolayers Silicon alloys Van der Waals forces
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2194224
专题	华南理工大学
作者单位	1.[1] Key Laboratory of Optoelectronic Technology and Systems, Education Ministry of China, Chongqing University, College of Optoelectronic Engineering, Chongqing University, Chongqing 2.400044, China 3.[2] School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 4.541004, China
推荐引用方式 GB/T 7714	Chen, Xianping[1,2],Sun, Xiang[1,2],Yang, D.G.[2],等. SiGe/h-BN heterostructure with inspired electronic and optical properties: A first-principles study (EI收录)[J]. Journal of Materials Chemistry C,2016,4:10082-10089.
APA	Chen, Xianping[1,2].,Sun, Xiang[1,2].,Yang, D.G.[2].,Meng, Ruishen[1].,Tan, Chunjian[1].,...&Jiang, Junke[2].(2016).SiGe/h-BN heterostructure with inspired electronic and optical properties: A first-principles study (EI收录).Journal of Materials Chemistry C,4,10082-10089.
MLA	Chen, Xianping[1,2],et al."SiGe/h-BN heterostructure with inspired electronic and optical properties: A first-principles study (EI收录)".Journal of Materials Chemistry C 4(2016):10082-10089.

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