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	Design considerations of biaxially tensile-strained germanium-on-silicon lasers (EI收录SCI收录)
	Li, Xiyue[1,2]; Li, Zhiqiang[3]; Li, Simon[3]; Chrostowski, Lukas[4]; Xia, Guangrui[2]
刊名	Semiconductor Science and Technology
	2016
卷号	31页码:065015-065015
关键词	Band structure Carrier lifetime Defects Design Fabry Perot interferometers Germanium Lasers Photonics Polycrystalline materials Polysilicon Strained silicon Structural optimization
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2193186
专题	华南理工大学
作者单位	1.[1] School of Electronic and Information Engineering, South China University of Technology, Guangzhou, Guangdong 2.510641, China 3.[2] Department of Materials Engineering, University of British Columbia, Vancouver 4.BC 5.V6T 1Z4, Canada 6.[3] Crosslight Software Inc., Vancouver 7.BC 8.V5M 2A4, Canada 9.[4] Department of Electrical and Computer Engineering, University of British Columbia, Vancouver 10.BC
推荐引用方式 GB/T 7714	Li, Xiyue[1,2],Li, Zhiqiang[3],Li, Simon[3],等. Design considerations of biaxially tensile-strained germanium-on-silicon lasers (EI收录SCI收录)[J]. Semiconductor Science and Technology,2016,31:065015-065015.
APA	Li, Xiyue[1,2],Li, Zhiqiang[3],Li, Simon[3],Chrostowski, Lukas[4],&Xia, Guangrui[2].(2016).Design considerations of biaxially tensile-strained germanium-on-silicon lasers (EI收录SCI收录).Semiconductor Science and Technology,31,065015-065015.
MLA	Li, Xiyue[1,2],et al."Design considerations of biaxially tensile-strained germanium-on-silicon lasers (EI收录SCI收录)".Semiconductor Science and Technology 31(2016):065015-065015.

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