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	Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors
	Liu, Kai[1,2]; Liu, Yuan[2]; Liu, Yu-Rong[1]; En, Yun-Fei[2]; Li, Bin[1]
刊名	MODERN PHYSICS LETTERS B
	2017
卷号	31
关键词	Polycrystalline silicon thin film transistor mobility
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2184418
专题	华南理工大学
作者单位	1.[1]South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Guangdong, Peoples R China 2.[2]CEPREI, Sci & Technol Reliabil Phys & Appl Elect Componen, Guangzhou, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Liu, Kai[1,2],Liu, Yuan[2],Liu, Yu-Rong[1],et al. Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors[J]. MODERN PHYSICS LETTERS B,2017,31.
APA	Liu, Kai[1,2],Liu, Yuan[2],Liu, Yu-Rong[1],En, Yun-Fei[2],&Li, Bin[1].(2017).Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors.MODERN PHYSICS LETTERS B,31.
MLA	Liu, Kai[1,2],et al."Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors".MODERN PHYSICS LETTERS B 31(2017).

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