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	Simulation of SiO2 etching in an inductively coupled CF4 plasma
	Xu, Qing[1,2]; Li, Yu-Xing[1,2]; Li, Xiao-Ning[1,2]; Wang, Jia-Bin[1,2]; Yang, Fan[3]; Yang, Yi[1,2]; Ren, Tian-Ling[1,2]
刊名	MODERN PHYSICS LETTERS B
	2017
卷号	31页码:1750042-1750042
关键词	Plasma simulation etching
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2181855
专题	华南理工大学
作者单位	1.[1]Tsinghua Univ, Tsinghu Natl Lab Informat Sci & Technol TN List, Beijing 10084, Peoples R China 2.[2]Tsinghua Univ, Inst Microelect, Beijing 10084, Peoples R China 3.[3]Tsinghua Univ, Grad Sch Shezhen, Adv Sensor & Integrated Syst Key Lab, Shenzhen 518055, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Xu, Qing[1,2],Li, Yu-Xing[1,2],Li, Xiao-Ning[1,2],et al. Simulation of SiO2 etching in an inductively coupled CF4 plasma[J]. MODERN PHYSICS LETTERS B,2017,31:1750042-1750042.
APA	Xu, Qing[1,2].,Li, Yu-Xing[1,2].,Li, Xiao-Ning[1,2].,Wang, Jia-Bin[1,2].,Yang, Fan[3].,...&Ren, Tian-Ling[1,2].(2017).Simulation of SiO2 etching in an inductively coupled CF4 plasma.MODERN PHYSICS LETTERS B,31,1750042-1750042.
MLA	Xu, Qing[1,2],et al."Simulation of SiO2 etching in an inductively coupled CF4 plasma".MODERN PHYSICS LETTERS B 31(2017):1750042-1750042.

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