QQ客服 官方微博 反馈留言

	Effect of doping concentration on point defect structure in as-implanted zno
	Wang, Huan-hua1,2; Yuan, Mengyao1
刊名	Solid state communications
	2017-08-01
卷号	261页码:41-45
关键词	P-type zno Ion implantation Diffuse x-ray scattering Point defects
ISSN号	0038-1098
DOI	10.1016/j.ssc.2017.04.021
通讯作者	Wang, huan-hua(wanghh@ihep.ac.cn)
英文摘要	The effect of doping concentration on the point defect structure of as-implanted zno single crystal was investigated using diffuse x-ray scattering and photoluminescence spectroscopy. based on the assumption that the low-dose ion implantation did not shift the phonon dispersion of the lattice, huang diffuse scattering signals were obtained by subtracting thermal diffuse scattering intensities. we found that the point defects aggregate into defect clusters after annealing, and their average size decreases and concentration increases with increasing the doping concentration. the underlying mechanisms of this counter-intuition result were suggested.
WOS关键词	X-RAY-SCATTERING ; THIN-FILMS ; LATTICE ; SI
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000405690400009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2177258
专题	高能物理研究所
通讯作者	Wang, Huan-hua
作者单位	1.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 2.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Wang, Huan-hua,Yuan, Mengyao. Effect of doping concentration on point defect structure in as-implanted zno[J]. Solid state communications,2017,261:41-45.
APA	Wang, Huan-hua,&Yuan, Mengyao.(2017).Effect of doping concentration on point defect structure in as-implanted zno.Solid state communications,261,41-45.
MLA	Wang, Huan-hua,et al."Effect of doping concentration on point defect structure in as-implanted zno".Solid state communications 261(2017):41-45.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。