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Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics
Zhang, Faqiang[1]; Wahyudi, Olivia[2]; Liu, Zhifu[3]; Gu, Hui[4]; Li, Yongxiang[5]
刊名JOURNAL OF ALLOYS AND COMPOUNDS
2018
卷号753页码:54-59
关键词Abnormal intergrowth structure High temperature piezoelectrics Bismuth-layered ferroelectrics Bi3TiNbO9 Bi4Ti3O12
ISSN号0925-8388
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2175447
专题上海大学
作者单位1.[1]Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China.
2.[2]Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China.
3.[3]Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China.
4.[4]Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China.
5.[5]Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China.
6.RMIT Univ, Sch Engn, Melbourne, Vic 3001, Australia.
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GB/T 7714
Zhang, Faqiang[1],Wahyudi, Olivia[2],Liu, Zhifu[3],et al. Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,753:54-59.
APA Zhang, Faqiang[1],Wahyudi, Olivia[2],Liu, Zhifu[3],Gu, Hui[4],&Li, Yongxiang[5].(2018).Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics.JOURNAL OF ALLOYS AND COMPOUNDS,753,54-59.
MLA Zhang, Faqiang[1],et al."Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics".JOURNAL OF ALLOYS AND COMPOUNDS 753(2018):54-59.
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