Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device | |
Gao, Ming[1]; Chen, Dongyun[2]; Han, Baichao[3]; Song, Wenlei[4]; Zhou, Miao[5]; Song, Xiaomin[6]; Xu, Fei[7]; Zhao, Lei[8]; Li, Yonghua[9]; Ma, Zhongquan[10] | |
刊名 | ACS APPLIED MATERIALS & INTERFACES |
2018 | |
卷号 | 10页码:27454-27464 |
关键词 | ternary hybrid interlayer MoOx/n-Si heterojunction device passivated contact hole-selective contact defect-assisted tunneling |
ISSN号 | 1944-8244 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2172836 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 8.[8]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 9.[9]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. 10.[10]Shanghai Univ, Dept Phys, SHU SOENs R&D Lab, Coll Sci, Shanghai 200444, Peoples R China. |
推荐引用方式 GB/T 7714 | Gao, Ming[1],Chen, Dongyun[2],Han, Baichao[3],et al. Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10:27454-27464. |
APA | Gao, Ming[1].,Chen, Dongyun[2].,Han, Baichao[3].,Song, Wenlei[4].,Zhou, Miao[5].,...&Ma, Zhongquan[10].(2018).Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device.ACS APPLIED MATERIALS & INTERFACES,10,27454-27464. |
MLA | Gao, Ming[1],et al."Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device".ACS APPLIED MATERIALS & INTERFACES 10(2018):27454-27464. |
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