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	Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time
	Yu, H. X.[1]; Yang, J. R.[2]; Zhang, J. J.[3]; Xu, C.[4]; Sun, S. W.[5]; Zhou, C. H.[6]
刊名	JOURNAL OF CRYSTAL GROWTH
	2019
卷号	506页码:1-7
关键词	Defects Etching Line defects Volume defects Semiconducting II-VI materials
ISSN号	0022-0248
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164752
专题	上海大学
作者单位	1.[1]Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Devices, 500 Yu Tian Rd, Shanghai 200083, Peoples R China. 2.[2]Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Devices, 500 Yu Tian Rd, Shanghai 200083, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, 99 Shang Da Rd, Shanghai 201900, Peoples R China. 4.[4]Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Devices, 500 Yu Tian Rd, Shanghai 200083, Peoples R China. 5.[5]Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Devices, 500 Yu Tian Rd, Shanghai 200083, Peoples R China. 6.[6]Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Devices, 500 Yu Tian Rd, Shanghai 200083, Peoples R China.
推荐引用方式 GB/T 7714	Yu, H. X.[1],Yang, J. R.[2],Zhang, J. J.[3],et al. Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time[J]. JOURNAL OF CRYSTAL GROWTH,2019,506:1-7.
APA	Yu, H. X.[1],Yang, J. R.[2],Zhang, J. J.[3],Xu, C.[4],Sun, S. W.[5],&Zhou, C. H.[6].(2019).Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time.JOURNAL OF CRYSTAL GROWTH,506,1-7.
MLA	Yu, H. X.[1],et al."Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time".JOURNAL OF CRYSTAL GROWTH 506(2019):1-7.

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