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	Interfacial engineering of 0D/2D SnS2 heterostructure onto nitrogen-doped graphene for boosted lithium storage capability
	Gao, Dongdong[1]; Wang, Yirui[2]; Liu, Yi[3]; Sun, Huiping[4]; Wu, Minghong[5]; Zhang, Haijiao[6]
刊名	JOURNAL OF COLLOID AND INTERFACE SCIENCE
	2019
卷号	538页码:116-124
关键词	SnS2 N-doped graphene 2D materials Interfacial engineering Lithium storage
ISSN号	0021-9797
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164687
专题	上海大学
作者单位	1.[1]Shanghai Univ, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China.,Shanghai Univ, Int Ctr Quantum & Mol Struct, Dept Phys, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China.,Shanghai Univ, Int Ctr Quantum & Mol Struct, Dept Phys, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Inst Nanochem & Nanobiol, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Gao, Dongdong[1],Wang, Yirui[2],Liu, Yi[3],et al. Interfacial engineering of 0D/2D SnS2 heterostructure onto nitrogen-doped graphene for boosted lithium storage capability[J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE,2019,538:116-124.
APA	Gao, Dongdong[1],Wang, Yirui[2],Liu, Yi[3],Sun, Huiping[4],Wu, Minghong[5],&Zhang, Haijiao[6].(2019).Interfacial engineering of 0D/2D SnS2 heterostructure onto nitrogen-doped graphene for boosted lithium storage capability.JOURNAL OF COLLOID AND INTERFACE SCIENCE,538,116-124.
MLA	Gao, Dongdong[1],et al."Interfacial engineering of 0D/2D SnS2 heterostructure onto nitrogen-doped graphene for boosted lithium storage capability".JOURNAL OF COLLOID AND INTERFACE SCIENCE 538(2019):116-124.

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