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	Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5-yLayIn2.2Sb6
	Lin, Jianwei[1]; Lv, Wanyu[2]; Gu, Yayun[3]; Guo, Kai[4]; Yang, Xinxin[5]; Zhao, Jingtai[6]
刊名	MATERIALS
	2019
卷号	12
关键词	Eu5In2Sb6 Zintl phase n-type thermoelectric properties
ISSN号	1996-1944
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164068
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 7.Shanghai Univ, State Key Lab Adv Special Steel, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Lin, Jianwei[1],Lv, Wanyu[2],Gu, Yayun[3],et al. Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5-yLayIn2.2Sb6[J]. MATERIALS,2019,12.
APA	Lin, Jianwei[1],Lv, Wanyu[2],Gu, Yayun[3],Guo, Kai[4],Yang, Xinxin[5],&Zhao, Jingtai[6].(2019).Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5-yLayIn2.2Sb6.MATERIALS,12.
MLA	Lin, Jianwei[1],et al."Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5-yLayIn2.2Sb6".MATERIALS 12(2019).

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