CORC  > 安徽大学
Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology
Liang,Huaguo; Xu,Xiumin; Yi,Maoxiang; Yan,Aibin; Ouyang,Yiming; Huang,Zhengfeng
刊名IEEE Transactions on Very Large Scale Integration (VLSI) Systems
2017
卷号Vol.25 No.6页码:1978-1982
关键词HIGH-PERFORMANCE TOLERANT LATCH SEU COST
ISSN号1063-8210;1557-9999
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2160022
专题安徽大学
作者单位1.Hefei Univ Technol, Sch Comp & Informat, Hefei 230009, Peoples R China
2.Anhui Univ, Sch Comp Sci & Technol, Hefei 230601, Peoples R China
3.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Peoples R China
推荐引用方式
GB/T 7714
Liang,Huaguo,Xu,Xiumin,Yi,Maoxiang,et al. Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems,2017,Vol.25 No.6:1978-1982.
APA Liang,Huaguo,Xu,Xiumin,Yi,Maoxiang,Yan,Aibin,Ouyang,Yiming,&Huang,Zhengfeng.(2017).Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology.IEEE Transactions on Very Large Scale Integration (VLSI) Systems,Vol.25 No.6,1978-1982.
MLA Liang,Huaguo,et al."Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology".IEEE Transactions on Very Large Scale Integration (VLSI) Systems Vol.25 No.6(2017):1978-1982.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace