Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology | |
Liang,Huaguo; Xu,Xiumin; Yi,Maoxiang; Yan,Aibin; Ouyang,Yiming; Huang,Zhengfeng | |
刊名 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
2017 | |
卷号 | Vol.25 No.6页码:1978-1982 |
关键词 | HIGH-PERFORMANCE TOLERANT LATCH SEU COST |
ISSN号 | 1063-8210;1557-9999 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2160022 |
专题 | 安徽大学 |
作者单位 | 1.Hefei Univ Technol, Sch Comp & Informat, Hefei 230009, Peoples R China 2.Anhui Univ, Sch Comp Sci & Technol, Hefei 230601, Peoples R China 3.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Peoples R China |
推荐引用方式 GB/T 7714 | Liang,Huaguo,Xu,Xiumin,Yi,Maoxiang,et al. Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems,2017,Vol.25 No.6:1978-1982. |
APA | Liang,Huaguo,Xu,Xiumin,Yi,Maoxiang,Yan,Aibin,Ouyang,Yiming,&Huang,Zhengfeng.(2017).Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology.IEEE Transactions on Very Large Scale Integration (VLSI) Systems,Vol.25 No.6,1978-1982. |
MLA | Liang,Huaguo,et al."Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology".IEEE Transactions on Very Large Scale Integration (VLSI) Systems Vol.25 No.6(2017):1978-1982. |
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