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Enhanced visible light response of ZnO porous thin film by post-annealing treatment
Chen, Xiaoshuang; Cheng, Yuebing; He, Gang; Lv, Jianguo; Wang, Wenhao; Zhang, Miao; Zhao, Min; Zhu, Weili; Sun, Zhaoqi
刊名Journal of Materials Science: Materials in Electronics
2017
卷号Vol.28 No.5页码:4051-4057
关键词ONE-STEP ELECTRODEPOSITION PHOTOCATALYTIC ACTIVITY OPTICAL-PROPERTIES NANOTUBE ARRAYS PHOTOCURRENT PHOTOLUMINESCENCE NANOSTRUCTURES NANOWIRE
ISSN号0957-4522;1573-482X
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2154877
专题安徽大学
作者单位1.Hefei Normal Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China
2.Anhui Univ, Cooperat Innovat Res Ctr Weak Signal Detecting Ma, Hefei 230601, Peoples R China
3.Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China
4.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
5.Hefei Normal Univ, Sci Res Innovat Team Funct Magnet Mat & Technol A, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714
Chen, Xiaoshuang,Cheng, Yuebing,He, Gang,et al. Enhanced visible light response of ZnO porous thin film by post-annealing treatment[J]. Journal of Materials Science: Materials in Electronics,2017,Vol.28 No.5:4051-4057.
APA Chen, Xiaoshuang.,Cheng, Yuebing.,He, Gang.,Lv, Jianguo.,Wang, Wenhao.,...&Sun, Zhaoqi.(2017).Enhanced visible light response of ZnO porous thin film by post-annealing treatment.Journal of Materials Science: Materials in Electronics,Vol.28 No.5,4051-4057.
MLA Chen, Xiaoshuang,et al."Enhanced visible light response of ZnO porous thin film by post-annealing treatment".Journal of Materials Science: Materials in Electronics Vol.28 No.5(2017):4051-4057.
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