Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

	Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors
	Wang YB ; Xu Y ; Zhang Y ; Yu X ; Song GF ; Chen LH
刊名	chinese physics b
	2011
卷号	20 期号:6 页码:art. no. 067302
关键词	InAs/GaSb superlattices p-doping concentration electrical and optical properties
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2011-07-07 ; 2011-07-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21399]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Wang YB,Xu Y,Zhang Y,et al. Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors[J]. chinese physics b,2011,20(6):art. no. 067302.
APA	Wang YB,Xu Y,Zhang Y,Yu X,Song GF,&Chen LH.(2011).Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors.chinese physics b,20(6),art. no. 067302.
MLA	Wang YB,et al."Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors".chinese physics b 20.6(2011):art. no. 067302.