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	Bias dependence of dose rate effects in the irradiated substrate PNP transistors (EI收录)
	Liu, Yuan[1]; Shi, Qian[1]; Zhang, Ting[1,2]; En, Yun-Fei[1]; Li, Bin[1,2]; He, Yu-Juan[1]
会议名称	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
会议日期	July 15, 2013 - July 19, 2013
会议地点	Suzhou, China
关键词	Degradation Failure analysis Integrated circuits Ionizing radiation
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2049036
专题	华南理工大学
作者单位	1.[1] Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China 2.[2] School of Electronic and Information Technology, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Liu, Yuan[1],Shi, Qian[1],Zhang, Ting[1,2],等. Bias dependence of dose rate effects in the irradiated substrate PNP transistors (EI收录)[C]. 见:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. Suzhou, China. July 15, 2013 - July 19, 2013.

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