Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

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	Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors
	Zhang BS (张宝顺); Cai Y (蔡勇)
刊名	Applied Physics Letters
	2010-08-09
期号	6
关键词	aggregation aluminium aluminium compounds gallium compounds gold high electron mobility transistors III-V semiconductors nickel ohmic contacts rapid thermal annealing semiconductor-metal boundaries surface morphology surface roughness titanium transmission electron microscopy wide band gap semiconductors X-ray chemical analysis
通讯作者	Gong, RM
合作状况	其它
英文摘要	A mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM images and corresponding electron dispersive x-ray spectra, the bulges were found to consist of Ni-Al alloy in the body and Au-Al alloy surrounding. We deduce that the bulges were formed due to Ni-Al alloy aggregation in some local areas during the rapid thermal annealing process, which accounts for the rough surface morphology.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000280940900045
公开日期	2010-12-31
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/313]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Zhang BS ,Cai Y . Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors[J]. Applied Physics Letters,2010(6).
APA	Zhang BS ,&Cai Y .(2010).Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors.Applied Physics Letters(6).
MLA	Zhang BS ,et al."Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors".Applied Physics Letters .6(2010).