Structural and optical properties of nearly stress-free m-plane ZnO film on (100) gamma-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

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	Structural and optical properties of nearly stress-free m-plane ZnO film on (100) gamma-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition
	Xu K (徐科)
刊名	Applied Surface Science
	2009-08-30
卷号	255 期号:22 页码:9146-9148
关键词	m-Plane ZnO thin film Semiconductor compounds Chemical vapor deposition Residual stress Photoluminescence spectra
通讯作者	Zhou, SM
合作状况	其它
英文摘要	(1 0 (1) over bar 0) m-plane ZnO film was epitaxially deposited on (1 0 0) gamma-LiAlO2 by metal-organic chemical vapor deposition at 600 degrees C with a GaN buffer layer. The epitaxial relationships between ZnO and GaN, GaN and (1 0 0) gamma-LiAlO2 were determined by X-ray diffraction Phi-scans. There exhibits very small decrease for the E-2 mode shift (0.3 cm (1)) of ZnO in the Raman spectrum, which indicates the epitaxial ZnO film was under a slight tensile stress (5.77 x 10(7) Pa). Unlike the highly strained a-plane ZnO, temperature dependent photoluminescence spectra show that the free A exiton emission was observed with the temperature <= 138 K.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000269075700031
公开日期	2011-03-14
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/381]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
推荐引用方式 GB/T 7714	Xu K . Structural and optical properties of nearly stress-free m-plane ZnO film on (100) gamma-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition[J]. Applied Surface Science,2009,255(22):9146-9148.
APA	Xu K .(2009).Structural and optical properties of nearly stress-free m-plane ZnO film on (100) gamma-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition.Applied Surface Science,255(22),9146-9148.
MLA	Xu K ."Structural and optical properties of nearly stress-free m-plane ZnO film on (100) gamma-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition".Applied Surface Science 255.22(2009):9146-9148.