Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction | |
Xu K (徐科); Xu Y (徐俞); Wang JF (王建峰); Hu XJ (胡晓剑); Zhang YM (张育民); Qiu YX (邱永鑫); Yang H (杨辉) | |
刊名 | Semiconductor Science and Technology |
2009-12 | |
卷号 | 24期号:12 |
通讯作者 | Xu K (徐科) |
合作状况 | 其它 |
英文摘要 | The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples. |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000272161700008 |
公开日期 | 2011-03-14 |
内容类型 | 期刊论文 |
源URL | [http://58.210.77.100/handle/332007/379] |
专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
通讯作者 | Xu K (徐科) |
推荐引用方式 GB/T 7714 | Xu K ,Xu Y ,Wang JF ,et al. Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction[J]. Semiconductor Science and Technology,2009,24(12). |
APA | Xu K .,Xu Y .,Wang JF .,Hu XJ .,Zhang YM .,...&Yang H .(2009).Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction.Semiconductor Science and Technology,24(12). |
MLA | Xu K ,et al."Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction".Semiconductor Science and Technology 24.12(2009). |
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