Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures | |
M. Liu ; Q. Fang ; G. He ; L. Q. Zhu ; L. D. Zhang | |
刊名 | journal of applied physics |
2007 | |
期号 | 101 |
合作状况 | 其它 |
学科主题 | 纳米材料与技术 |
收录类别 | SCI |
公开日期 | 2010-07-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn/handle/334002/3535] |
专题 | 合肥物质科学研究院_中科院固体物理研究所 |
推荐引用方式 GB/T 7714 | M. Liu,Q. Fang,G. He,et al. Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures[J]. journal of applied physics,2007(101). |
APA | M. Liu,Q. Fang,G. He,L. Q. Zhu,&L. D. Zhang.(2007).Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures.journal of applied physics(101). |
MLA | M. Liu,et al."Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures".journal of applied physics .101(2007). |
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