Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band

doi:10.1016/j.jeurceramsoc.2016.12.028

	Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band
	Luo, Heng 1,2; Tan, Yongqiang 1; Li, Yang 2,3; Xiao, Peng 2; Deng, Lianwen 2; Zeng, Sifan 1; Zhang, Guojun 4,5; Zhang, Haibin 1; Zhou, Xiaosong 1; Peng, Shuming 1
刊名	Journal of the European Ceramic Society
	2017
卷号	37 期号:5 页码:1961-1968
ISSN号	09552219
DOI	10.1016/j.jeurceramsoc.2016.12.028
英文摘要	The high-temperature dielectric behavior of multilayer Cf/Si3N4composites fabricated by gelcasting and pressuureless sintering was intensively investigated at temperatures coverage up to 800 °C in X-band (8.2–12.4 GHz). Experimental results have shown the permittivity of Si3N4matrix exhibits excellent thermo-stability with temperature coefficient lower than 10−3 °C−1. Besides, both the real and imaginary parts of permittivity of multilayer Cf/Si3N4composites exhibit positive temperature coefficient characteristic which attributed to the enhancement of space charge polarization. Furthermore, temperature-dependent permittivity of Cf/Si3N4composites is demonstrated to be well distributed on circular arcs with centers actually keep around the real (Ε') axis in Cole-Cole plane. Finally, the relaxation time for multilayer Cf/Si3N4composites gradually increases from 216.1 ps to 250.2 ps when heated from room temperature to 800 °C, and is almost twice as much as a single cycle for electromagnetic wave in X-band which leads to continuous decrease in permittivity with frequency. © 2016 Elsevier Ltd
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25810]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Innovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang; 621900, China; 2.State Key Laboratory for Powder Metallurgy, Central South University, Changsha; 410083, China; 3.Ceramic Materials Engineering, University of Bayreuth, Bayreuth; 95447, Germany; 4.State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai; 201620, China; 5.Research Institute of Functional Materials, Donghua University, Shanghai; 201620, China
推荐引用方式 GB/T 7714	Luo, Heng,Tan, Yongqiang,Li, Yang,et al. Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band[J]. Journal of the European Ceramic Society,2017,37(5):1961-1968.
APA	Luo, Heng.,Tan, Yongqiang.,Li, Yang.,Xiao, Peng.,Deng, Lianwen.,...&Peng, Shuming.(2017).Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band.Journal of the European Ceramic Society,37(5),1961-1968.
MLA	Luo, Heng,et al."Modeling for high-temperature dielectric behavior of multilayer Cf/Si3N4composites in X-band".Journal of the European Ceramic Society 37.5(2017):1961-1968.