Disorder-induced localization in doped ZnO by different sintering atmosphere

doi:10.1016/j.ceramint.2018.08.116

	Disorder-induced localization in doped ZnO by different sintering atmosphere
	Tian, Tian; Zheng, Liaoying; Ruan, Xuezheng; Li, Guorong
刊名	Ceramics International
	2018
ISSN号	02728842
DOI	10.1016/j.ceramint.2018.08.116
英文摘要	Different sintering atmosphere could tune the electrical resistivity and lead to a metal-insulator transition for the doped ZnO ceramics. However, there was no satisfactory explanation for the metal-insulator transition and a lack of study about the low-temperature charge transport properties which is essential for further improvements of electrical properties. In this work, a systematic study of electrical properties of doped ZnO ceramics by different sintering atmosphere was presented. The results revealed that the metal-insulator transition was not only owing to the increased carrier concentration predicted by Mott but also owing to the weak localization theory known as Anderson localization. Moreover, the sintering atmosphere could tune the energy gap by Burstein-Moss effect. It can be concluded that the control of sintering atmosphere is an effective way to tune the electrical properties and energy gap for further optimization the performance. © 2018
出版者	Elsevier Ltd
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25157]
专题	中国科学院上海硅酸盐研究所
作者单位	Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China
推荐引用方式 GB/T 7714	Tian, Tian,Zheng, Liaoying,Ruan, Xuezheng,et al. Disorder-induced localization in doped ZnO by different sintering atmosphere[J]. Ceramics International,2018.
APA	Tian, Tian,Zheng, Liaoying,Ruan, Xuezheng,&Li, Guorong.(2018).Disorder-induced localization in doped ZnO by different sintering atmosphere.Ceramics International.
MLA	Tian, Tian,et al."Disorder-induced localization in doped ZnO by different sintering atmosphere".Ceramics International (2018).