Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures

doi:10.1103/PhysRevApplied.9.044039

	Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures
	Zheng, Ming 1; Ni, Hao 1,2; Xu, Xiaoke 3; Qi, Yaping 1; Li, Xiaomin 3; Gao, Ju 1,4
刊名	PHYSICAL REVIEW APPLIED
	2018
卷号	9 期号:4
ISSN号	2331-7019
DOI	10.1103/PhysRevApplied.9.044039
英文摘要	Electronic phase separation has been used to realize exotic functionalities in complex oxides with external stimuli, such as magnetic field, electric field, current, light, strain, etc. Using the Nd0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2-3)O-3-0.3PbTiO(3) multiferroic heterostructure as a model system, we investigate the electric field and light cocontrol of phase separation in resistive switching. The electricfield-induced nonvolatile electroresistance response is achieved at room temperature using reversible ferroelastic domain switching, which can be robustly modified on illumination of light. Moreover, the electrically controlled ferroelastic strain can effectively enhance the visible-light-induced photoresistance effect. These findings demonstrate that the electric-field-and light-induced effects strongly correlate with each other and are essentially driven by electronic phase separation. Our work opens a gate to design electrically tunable multifunctional storage devices based on multiferroic heterostructures by adding light as an extra control parameter.
学科主题	Physics, Applied
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000430911800004
资助机构	This work was supported by the National Key Project for Basic Research (Grant No. 2014CB921002), the National Natural Science Foundation of China (Grants No. 11374225, No. 11574227, No. 51572280, and No. 11504432), the Foundation of the Shanghai Committee for Science and Technology (Grant No. 15JC1403600), the Fundamental Research Funds for the Central Universities (Grant No. 18CX02046A), the Research Grant Council of Hong Kong (Project Nos. HKU 702112P and HKU 701813), and the Qingdao Science and Technology Program for Youth (Grant No. 16-5-1-6-jch). ; This work was supported by the National Key Project for Basic Research (Grant No. 2014CB921002), the National Natural Science Foundation of China (Grants No. 11374225, No. 11574227, No. 51572280, and No. 11504432), the Foundation of the Shanghai Committee for Science and Technology (Grant No. 15JC1403600), the Fundamental Research Funds for the Central Universities (Grant No. 18CX02046A), the Research Grant Council of Hong Kong (Project Nos. HKU 702112P and HKU 701813), and the Qingdao Science and Technology Program for Youth (Grant No. 16-5-1-6-jch).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24972]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China 2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China 3.China Univ Petr, Coll Sci, Qingdao 255680, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 5.Zaozhuang Univ, Sch Optoelect Engn, Zaozhuang 277160, Shandong, Peoples R China
推荐引用方式 GB/T 7714	Zheng, Ming,Ni, Hao,Xu, Xiaoke,et al. Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures[J]. PHYSICAL REVIEW APPLIED,2018,9(4).
APA	Zheng, Ming,Ni, Hao,Xu, Xiaoke,Qi, Yaping,Li, Xiaomin,&Gao, Ju.(2018).Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures.PHYSICAL REVIEW APPLIED,9(4).
MLA	Zheng, Ming,et al."Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures".PHYSICAL REVIEW APPLIED 9.4(2018).