Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C

doi:10.1016/j.jeurceramsoc.2017.12.050

	Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C
	Su, Bizhe ; Liang, Hanqin ; Liu, Guiling ; Huang, Zhengren ; Liu, Xuejian ; Chen, Zhongming ; Yu, Denis Y. W.
刊名	JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
	2018
卷号	38 期号:5 页码:2289
关键词	SiC ceramics Ion irradiation Damage development
ISSN号	0955-2219
DOI	10.1016/j.jeurceramsoc.2017.12.050
英文摘要	Irradiation damage of the materials depends on the irradiation dose and the intrinsic property of the material. In this paper, the high purity hot pressing sintered SiC ceramics with very few second phase and excellent crystallinity were prepared as the target materials, and the high irradiation dose up to 0.95 and 3.16 dpa respectively were chosen. The as-sintered SiC ceramics were irradiated with a 160 keV Ar ion beam at 600 degrees C. X-ray photoelectron spectroscopy, Raman spectrum, transmission electron microscopy and nanoindentation tests were utilized to analyze the microstructure variations on the surface of irradiated SiC, and it was found that the irradiated crystals kept crystallinity, although amorphization of SiC was generated with 10-25 nm depth, following with a mixture of point defect clusters and extended defects. Furthermore, it is also evident that there is a balance between irradiated-induced damages buildup and dynamic annealing of defects in high temperature.
学科主题	Materials Science, Ceramics
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000426029700004
资助机构	The authors express their gratitude for financial support from the Shanghai Sailing Program (No. 16YF1412900). The authors appreciate the Laboratory of 320 kV High-voltage Platform in Institute of Modern Physics, CAS for ion implantation. ; The authors express their gratitude for financial support from the Shanghai Sailing Program (No. 16YF1412900). The authors appreciate the Laboratory of 320 kV High-voltage Platform in Institute of Modern Physics, CAS for ion implantation.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24964]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Su, Bizhe; Yu, Denis Y. W.] City Univ Hong Kong, Sch Energy & Environm, Hong Kong, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Su, Bizhe,Liang, Hanqin,Liu, Guiling,et al. Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2018,38(5):2289, 2296.
APA	Su, Bizhe.,Liang, Hanqin.,Liu, Guiling.,Huang, Zhengren.,Liu, Xuejian.,...&Yu, Denis Y. W..(2018).Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,38(5),2289.
MLA	Su, Bizhe,et al."Damage development of sintered SiC ceramics with the depth variation in Ar ion-irradiation at 600 degrees C".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 38.5(2018):2289.