Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector
Cao, Penghui; Huang, Wei1; Guo, Hui; Zhang, Yuming
刊名IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
卷号65期号:5页码:2047
关键词4H Silicon Carbide (4H-SiC) aluminum doped ZnO (AZO) photoconductive semiconductor switch (PCSS) silver mirror
ISSN号0018-9383
DOI10.1109/TED.2018.2815634
英文摘要A new vertical geometry photoconductive switch device based on vanadium compensated 4H Silicon Carbide (4H-SiC) is presented with the structure of aluminum doped ZnO (AZO) transparent conductive window on the top of 4H-SiC and a silver mirror reflector on the backside. For this newstructure, laser can trigger the device convenientlyby irradiate the electrodeface directly. Acircuit without load resistor is used to test the performance of device, and a switch is triggered by Nd:YAG 532-nm laser (10-ns full-width at half-maximum). Results show that the minimum on-state resistance is 7.5 Omega at an illumination density of 18.2 MW/cm(2), and the breakdown voltage is 12 kV (breakdown electric field is 260 kV/cm). In particular, the optical utilization efficiency of laser energy and the minimum on-state resistance performance are significantly improved in this new vertical geometry photoconductive switch by the AZO film and mirror reflector.
学科主题Engineering, Electrical & Electronic ; Physics, Applied
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号WOS:000430698900057
资助机构This work was supported in part by the Natural Science Foundation of China under Grant 61575153 and in part by the Young Scientists Fund of the National Natural Science Foundation of China under Grant 61404146. The review of this brief was arranged by Editor J. Huang. (Corresponding authors: Hui Guo ; Wei Huang.) ; This work was supported in part by the Natural Science Foundation of China under Grant 61575153 and in part by the Young Scientists Fund of the National Natural Science Foundation of China under Grant 61404146. The review of this brief was arranged by Editor J. Huang. (Corresponding authors: Hui Guo ; Wei Huang.)
内容类型期刊论文
源URL[http://ir.sic.ac.cn/handle/331005/24949]  
专题中国科学院上海硅酸盐研究所
作者单位1.Xidian Univ, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Shaanxi, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201899, Peoples R China
推荐引用方式
GB/T 7714
Cao, Penghui,Huang, Wei,Guo, Hui,et al. Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65(5):2047, 2051.
APA Cao, Penghui,Huang, Wei,Guo, Hui,&Zhang, Yuming.(2018).Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector.IEEE TRANSACTIONS ON ELECTRON DEVICES,65(5),2047.
MLA Cao, Penghui,et al."Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector".IEEE TRANSACTIONS ON ELECTRON DEVICES 65.5(2018):2047.
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