Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT

doi:10.1063/1.5037057

	Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT
	Lian, Jianyun 1,2; Ponchel, Freddy 1; Tiercelin, Nicolas 1; Han, Liuyang 1,2; Chen, Ying 2; Remiens, Denis 1; Lasri, Tuami 1; Wang, Genshui ; Pernod, Philippe 1; Zhang, Wenbin
刊名	JOURNAL OF APPLIED PHYSICS
	2018
卷号	124 期号:6
ISSN号	0021-8979
DOI	10.1063/1.5037057
英文摘要	The artificial multiferroic heterostructure used in this work is composed by an yttrium iron garnet (YIG) film deposited by radio frequency (rf) magnetron sputtering on a metalized PMN-PZT ceramic. We demonstrate, thanks to the well-known converse magnetoelectric (CME) coupling, the control of the magnetic state of the YIG film by means of a low electric field applied to the PMN-PZT ceramic. In particular, it is shown that the variations of the magnetization induced by the strain are functions of the magnetic sate of the film. It is shown that the maximum amplitude variation is observed at the coercive magnetic field (Hc), whereas when H increases, the strain effect has a limited impact on the film magnetization. A second effect has also been remarked on the magnetization of the YIG film but only after the first strain induced cycle has been applied. These variations, observed only under low applied magnetic fields, can be attributed to the re-orientation of some magnetic moments which are easy to switch under low magnetic fields. We find that after poling the YIG film, i.e., applying a magnetic field on it, the initial state is restored. The CME coupling coefficient is determined for different magnetic states of the YIG film, and the maximum value 11 x 10(-8) s/m is obtained at H = Hc and E = Ec (the coercive field of the PMN-PZT ceramic). The relative susceptibility tunability available for the heterostructure proposed is 16.8% for an electric field applied between 0 and -4 kV/cm. Published by AIP Publishing.
学科主题	Physics, Applied
出版者	AMER INST PHYSICS
WOS记录号	WOS:000441671600016
资助机构	This work was supported by the International Partnership Program of Chinese Academy of Sciences (Grant No. GJHZ1821), the National Natural Science Foundation of China (U153010140), and the Chinese Academy of Sciences President's International Fellowship Initiative (Grant No. 2017VEA0002). ; This work was supported by the International Partnership Program of Chinese Academy of Sciences (Grant No. GJHZ1821), the National Natural Science Foundation of China (U153010140), and the Chinese Academy of Sciences President's International Fellowship Initiative (Grant No. 2017VEA0002).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24733]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Univ Valenciennes, Univ Lille, CNRS, Cent Lille,ISEN,LIA LICS LEMAC,UMR 8520 IEMN, F-59000 Lille, France 3.Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Lian, Jianyun,Ponchel, Freddy,Tiercelin, Nicolas,et al. Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT[J]. JOURNAL OF APPLIED PHYSICS,2018,124(6).
APA	Lian, Jianyun.,Ponchel, Freddy.,Tiercelin, Nicolas.,Han, Liuyang.,Chen, Ying.,...&Dong, Xianlin.(2018).Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT.JOURNAL OF APPLIED PHYSICS,124(6).
MLA	Lian, Jianyun,et al."Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT".JOURNAL OF APPLIED PHYSICS 124.6(2018).