The determination of the x value in doped Hg1-xCdxTe by transmission spectra
Yue, FY; Chen, L; Li, YW; Sun, L; Yang, PX; Chu, JH
刊名CHINESE PHYSICS B
2012
卷号21期号:1
英文摘要Variable-temperature transmission/absorption spectra are measured on As-doped Hg1-xCdxTe grown by molecular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on V-Hg (unintentionally)-doped HgCdTe. By referring to the empirical formulas of E-g(x, T), the x value of the epilayer is calculated and its inconsistency between the extreme temperatures (e. g. 10 and 300 K) is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value (or E-g) in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible (e. g. 10 K), and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.
WOS记录号WOS:000300258200078
公开日期2013-03-18
内容类型期刊论文
源URL[http://202.127.1.142/handle/181331/7203]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Yue, FY,Chen, L,Li, YW,et al. The determination of the x value in doped Hg1-xCdxTe by transmission spectra[J]. CHINESE PHYSICS B,2012,21(1).
APA Yue, FY,Chen, L,Li, YW,Sun, L,Yang, PX,&Chu, JH.(2012).The determination of the x value in doped Hg1-xCdxTe by transmission spectra.CHINESE PHYSICS B,21(1).
MLA Yue, FY,et al."The determination of the x value in doped Hg1-xCdxTe by transmission spectra".CHINESE PHYSICS B 21.1(2012).
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