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	Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
	Dagnelund, D; Vorona, IP; Nosenko, G; Wang, XJ; Tu, CW; Yonezu, H; Polimeni, A; Capizzi, M; Chen, WM; Buyanova, IA
刊名	JOURNAL OF APPLIED PHYSICS
	2012
卷号	111期号:2
英文摘要	Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676576]
WOS记录号	WOS:000299792400013
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7167]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Dagnelund, D,Vorona, IP,Nosenko, G,et al. Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study[J]. JOURNAL OF APPLIED PHYSICS,2012,111(2).
APA	Dagnelund, D.,Vorona, IP.,Nosenko, G.,Wang, XJ.,Tu, CW.,...&Buyanova, IA.(2012).Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study.JOURNAL OF APPLIED PHYSICS,111(2).
MLA	Dagnelund, D,et al."Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study".JOURNAL OF APPLIED PHYSICS 111.2(2012).

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