The Dependence of Structural Stability and Tunable Gap on the Si Components of ZnSe/Si Bi-Coaxial Nanowire Heterostructures

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	The Dependence of Structural Stability and Tunable Gap on the Si Components of ZnSe/Si Bi-Coaxial Nanowire Heterostructures
	Xing, HZ; Zhang, HY; Huang, Y; Zhang, L; Xu, XF; Wang, CR; Chen, XS
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2012
卷号	12 期号:3
英文摘要	The bare and hydrogen-passivated ZnSe/Si bi-coaxial nanowire heterostructures along [110] direction have been investigated by using the first-principle calculations within density functional theory. The structural stability and electronic property of ZnSe/Si bi-coaxial nanowire heterostructures have been shown by changing the Si components. It is found that the ZnSe/Si nanowires have zero gaps at lower Si components, and then they have the increasing gap at higher Si components. It is seen clearly that there is the transition of band gap form zero to nonzero. With increasing Si components, the ZnSe/Si nanowires can be also achieved as n-type or p-type, in agreement qualitatively with the experimental observations. In addition, the structural stabilities and the cohesive energies of ZnSe/Si bi-coaxial nanowires are changed obviously with the different Si components.
WOS记录号	WOS:000305039700118
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7117]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Xing, HZ,Zhang, HY,Huang, Y,et al. The Dependence of Structural Stability and Tunable Gap on the Si Components of ZnSe/Si Bi-Coaxial Nanowire Heterostructures[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2012,12(3).
APA	Xing, HZ.,Zhang, HY.,Huang, Y.,Zhang, L.,Xu, XF.,...&Chen, XS.(2012).The Dependence of Structural Stability and Tunable Gap on the Si Components of ZnSe/Si Bi-Coaxial Nanowire Heterostructures.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,12(3).
MLA	Xing, HZ,et al."The Dependence of Structural Stability and Tunable Gap on the Si Components of ZnSe/Si Bi-Coaxial Nanowire Heterostructures".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12.3(2012).