Effective g-factor in high-mobility InGaAs/InP quantum well

	Effective g-factor in high-mobility InGaAs/InP quantum well
	Wei, LM; Zhou, YM; Yu, GL; Gao, KH; Liu, XZ; Lin, T; Guo, SL; Dai, N; Chu, JH; Guy, AD
刊名	ACTA PHYSICA SINICA
	2012
卷号	61 期号:12
英文摘要	High-mobility In0.53Ga0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.
WOS记录号	WOS:000306394400056
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7037]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Wei, LM,Zhou, YM,Yu, GL,et al. Effective g-factor in high-mobility InGaAs/InP quantum well[J]. ACTA PHYSICA SINICA,2012,61(12).
APA	Wei, LM.,Zhou, YM.,Yu, GL.,Gao, KH.,Liu, XZ.,...&Guy, AD.(2012).Effective g-factor in high-mobility InGaAs/InP quantum well.ACTA PHYSICA SINICA,61(12).
MLA	Wei, LM,et al."Effective g-factor in high-mobility InGaAs/InP quantum well".ACTA PHYSICA SINICA 61.12(2012).