Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells
Zhou, WZ; Wang, W; Chang, ZG; Wang, YZ; Lan, ZQ; Shang, LY; Lin, T; Cui, LJ; Zeng, YP; Li, GX
刊名JOURNAL OF APPLIED PHYSICS
2012
卷号112期号:2
英文摘要The effects of different scattering on two-dimensional electron gases (2DEGs) in lattice matched In0.53Ga0.47As/In0.52Al0.48As quantum wells with silicon delta-doped in one barrier layer have been investigated by means of magneto-transport measurements. For the studied samples, the 2DEGs have occupied two subbands. It is found that the dominant scattering mechanism is ionized impurities scattering for the two subbands' electrons. Besides the dominant scattering mechanism of ionized impurities scattering, Coulomb scattering also plays a role in scattering mechanism for both subbands. Both the transport scattering time and the quantum scattering time of the second subband are larger than those of the first subband. It is because that the electrons of the first subband are, on average, closer to the ionized impurities in the doped layer, they will be scattered more strongly than those in the second subband. Due to the electron wave functions for the second subband spread more widely in the quantum wells, the alloy disorder scattering is more important for the carriers in the second subband than that in the first subband. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737777]
WOS记录号WOS:000308424500061
公开日期2013-03-18
内容类型期刊论文
源URL[http://202.127.1.142/handle/181331/7009]  
专题上海技术物理研究所_上海技物所
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Zhou, WZ,Wang, W,Chang, ZG,et al. Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2012,112(2).
APA Zhou, WZ.,Wang, W.,Chang, ZG.,Wang, YZ.,Lan, ZQ.,...&Chu, JH.(2012).Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells.JOURNAL OF APPLIED PHYSICS,112(2).
MLA Zhou, WZ,et al."Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells".JOURNAL OF APPLIED PHYSICS 112.2(2012).
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