Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection

doi:10.1364/OE.25.001629

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	Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection
	Wang FF; Chen JX; Xu ZC; Zhou Y; He L
刊名	OPTICS EXPRESS
	2017
卷号	25 期号:3 页码:1629-1635
DOI	10.1364/OE.25.001629
英文摘要	In this paper, we report on the characterization of InAs/GaAsSb type-II superlattice long wavelength infrared photodiodes grown on InAs substrates by molecular-beam epitaxy and also present the device performance comparison with the superlattice devices grown on GaSb substrates. These devices with PIN structures had a 100% cutoff wavelength of 10 mu m. The dark current density of InAs-based device at -30 mV reverse bias was 4.01 x 10(-4) A/cm(2) and the resistance-area product at zero bias (R(0)A) was 36.9 Omega cm(2). The dark current density of GaSb-based device is higher more than one order of magnitude than that of InAs-based device. The temperature-dependence and bias-dependence of the dark current are studied experimentally and correlated to the theory. Good agreement was achieved between the measured I-V curves and the simulated ones, and between the experimental and theoretically predicted differential resistance values. Compared with InAs-based superlattice device, the generation-recombination current of GaSb-based device is larger and dominates in a wider temperature range due to shorter carrier lifetime and higher defect density. (C) 2017 Optical Society of America
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12290]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Wang FF,Chen JX,Xu ZC,et al. Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection[J]. OPTICS EXPRESS,2017,25(3):1629-1635.
APA	Wang FF,Chen JX,Xu ZC,Zhou Y,&He L.(2017).Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection.OPTICS EXPRESS,25(3),1629-1635.
MLA	Wang FF,et al."Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection".OPTICS EXPRESS 25.3(2017):1629-1635.