Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays

doi:10.1364/OL.42.001325

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	Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays
	Li YT; Hu WD; Ye ZH; Chen YY; Chen XS; Lu W
刊名	OPTICS LETTERS
	2017
卷号	42 期号:7 页码:1325-1328
关键词	BEAM-INDUCED CURRENT
DOI	10.1364/OL.42.001325
英文摘要	Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg1-xCdxTe (x = 0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs. (C) 2017 Optical Society of America
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12282]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Li YT,Hu WD,Ye ZH,et al. Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays[J]. OPTICS LETTERS,2017,42(7):1325-1328.
APA	Li YT,Hu WD,Ye ZH,Chen YY,Chen XS,&Lu W.(2017).Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.OPTICS LETTERS,42(7),1325-1328.
MLA	Li YT,et al."Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays".OPTICS LETTERS 42.7(2017):1325-1328.