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	A Study on Inductively Coupled Plasma Etch Rate of HgCdTe at Cryogenic Temperature
	Liu FL; Chen YY; Ye ZH; Ding RJ; He L
	2017
DOI	10.1117/12.2262537
英文摘要	Etching at cryogenic temperature can reduced the etch-induced damage in HgCdTe during etch process which is important to fabricate high performance IRFPAs (Infrared Focal Plane Arrays) detectors. The etch rates of HgCdTe were examined to be similar at different temperatures and the smoothness of the etched surface improves at cryogenic temperature using a standard process and the etch rates of different CH4/Ar/H-2 plasmas at 123K were also investigated. Addition of H-2 increases the roughness of etched sidewall while has little effect on etched bottom surface roughness and SiO2 with a contact layer of ZnS functioned well as etch mask during cryoetching under CH4/Ar/H-2 plasmas.
语种	英语
内容类型	会议论文
源URL	[http://202.127.2.71:8080/handle/181331/12077]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Liu FL,Chen YY,Ye ZH,et al. A Study on Inductively Coupled Plasma Etch Rate of HgCdTe at Cryogenic Temperature[C]. 见:.

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