Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique

	Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique
	Li B; Zhang XP; Zhu JQ; Chu JH
刊名	JOURNAL OF CRYSTAL GROWTH
	1998
卷号	184 页码:1242-1246
WOS记录号	WOS:000072653800256
公开日期	2012-11-21
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/6266]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Li B,Zhang XP,Zhu JQ,et al. Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique[J]. JOURNAL OF CRYSTAL GROWTH,1998,184:1242-1246.
APA	Li B,Zhang XP,Zhu JQ,&Chu JH.(1998).Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique.JOURNAL OF CRYSTAL GROWTH,184,1242-1246.
MLA	Li B,et al."Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique".JOURNAL OF CRYSTAL GROWTH 184(1998):1242-1246.