Spin dependence of electron effective masses in InGaAs/InAlAs quantum well

	Spin dependence of electron effective masses in InGaAs/InAlAs quantum well
	L.M.Wei; K.H.Gao; X.Z.Liu
刊名	Colloids and Surfaces A: Physicochemical and Engineering Aspects
	2011
卷号	110 期号:6
学科主题	红外基础研究
WOS记录号	WOS:000295619300062
公开日期	2012-10-23
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/5751]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	L.M.Wei,K.H.Gao,X.Z.Liu. Spin dependence of electron effective masses in InGaAs/InAlAs quantum well[J]. Colloids and Surfaces A: Physicochemical and Engineering Aspects,2011,110(6).
APA	L.M.Wei,K.H.Gao,&X.Z.Liu.(2011).Spin dependence of electron effective masses in InGaAs/InAlAs quantum well.Colloids and Surfaces A: Physicochemical and Engineering Aspects,110(6).
MLA	L.M.Wei,et al."Spin dependence of electron effective masses in InGaAs/InAlAs quantum well".Colloids and Surfaces A: Physicochemical and Engineering Aspects 110.6(2011).