Chemical vapor deposition growth of scalable monolayer polycrystalline graphene films with millimeter-sized domains | |
Yin, Shaoqian; Zhang, Xuewei; Xu, Chen; Wang, Yang; Wang, Yunlu; Li, Peifeng; Sun, Hongyan; Wang, Miao; Xia, Yang; Lin, Cheng-Te | |
刊名 | MATERIALS LETTERS |
2018 | |
卷号 | 215页码:259-262 |
关键词 | Single-crystal Graphene Copper Foils High-quality Surface Oxygen Nucleation |
英文摘要 | The preparation of scalable graphene films has attracted an enormous attention due to its industrial importance for graphene applications. Here we present a synthesis method of high-quality continuous monolayer graphene films with millimeter-sized domains on ordinary Cu substrates using oxygen-assisted chemical vapor deposition. This method demonstrates a significantly improvement to the resultant graphene such as a largely decreased nucleation density from similar to 10(6) to similar to 10(1) nuclei/cm(2), an increased average domain size from similar to 0.004 to similar to 1.5 mm and a film coverage from 64% to 100%. We attributed the success of this growth to the surface layer formed by bonded oxygen in Cu, which provides a higher priority for catalyzing the nucleation and growth of graphene domains. (C) 2018 Elsevier B.V. All rights reserved. |
学科主题 | Materials Science ; Physics |
语种 | 英语 |
公开日期 | 2018-12-04 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/16759] |
专题 | 2018专题 |
推荐引用方式 GB/T 7714 | Yin, Shaoqian,Zhang, Xuewei,Xu, Chen,et al. Chemical vapor deposition growth of scalable monolayer polycrystalline graphene films with millimeter-sized domains[J]. MATERIALS LETTERS,2018,215:259-262. |
APA | Yin, Shaoqian.,Zhang, Xuewei.,Xu, Chen.,Wang, Yang.,Wang, Yunlu.,...&Wang, Hongtao.(2018).Chemical vapor deposition growth of scalable monolayer polycrystalline graphene films with millimeter-sized domains.MATERIALS LETTERS,215,259-262. |
MLA | Yin, Shaoqian,et al."Chemical vapor deposition growth of scalable monolayer polycrystalline graphene films with millimeter-sized domains".MATERIALS LETTERS 215(2018):259-262. |
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