Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

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	Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells
	Cai, Liang; Yang, Zhenhai; Chen, Kangmin; Yuan, Zhizhong; Yan, Baojie; Wu, Chung-Han; Gao, Pingqi; Ye, Jichun; Zeng, Yuheng; Tong, Hui
刊名	SOLAR ENERGY
	2017
卷号	155 页码:654-660
关键词	Rear Contacts Simulation
英文摘要	In this work, we used the numerical simulation method to study the tunnel oxide passivated carrier selective contacts (TOPCon) structured solar cells, with the focus especially on the paths towards excellent surface passivation and low contact resistance. The presence of an ultra-thin silicon oxide (SiO2) with high quality (typically low interface-states density, At D-it approximate to 1 x 10(10) cm(-2) eV(-1) and low pinhole density, Dph < 1 x 10(-4)) suppresses the recombination of carriers a,t the rear surface. As a result, implied open circuit voltage (iV(oc)) could be promoted by a value of more than 30 mV comparing with the solar cell without oxide layer, which is the primary benefit originated from TOPCon structure. Corresponding, the iV(oc), and recombination current density (Joe) could reach 745 mV and similar to 9.5 fA/cm(2) (Delta n = 5 x 10(15) cm(-3)) for the 1-52 cm and 200-Rm n-type wafer covered with high-quality oxide and n.-Si layers. In addition to passivation, a well-designed SiO2/n+-Si backside structure is also critical for carrier collection. The tunneling current is susceptible to oxide thickness, i.e., a 0.2-nm increase in SiO2 thickness results in the decrease of the tunneling current by more than one magnitude under certain circumstance. Fortunately, raising the doping in ntSi layer enhances the tunneling possibility of electron, which allows for a thicker oxide that is favorable to a stable mass production. The simulation suggests that to obtain a high fill factor (FF, >84%), a minimum forward-bias saturated tunneling current of about 0.01 A/cm(2), more favorable of 0.1 A/cm(2), is required for the Si/SiO2/n(+)-Si structure. Generally, our work offers an improved understanding of tunnel oxide, doping layer and their combined effects on TOPCon solar cells. Besides simulation, we also discuss the practical manufactures of how to control the above mentioned parameters, as well as the problems needed to be solved for further work. (C) 2017 Elsevier Ltd. All rights reserved.
学科主题	Chemistry
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17503]
专题	2017专题
推荐引用方式 GB/T 7714	Cai, Liang,Yang, Zhenhai,Chen, Kangmin,et al. Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells[J]. SOLAR ENERGY,2017,155:654-660.
APA	Cai, Liang.,Yang, Zhenhai.,Chen, Kangmin.,Yuan, Zhizhong.,Yan, Baojie.,...&Quan, Cheng.(2017).Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells.SOLAR ENERGY,155,654-660.
MLA	Cai, Liang,et al."Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells".SOLAR ENERGY 155(2017):654-660.