Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness

	Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness
	Shi, Xiangyang; Wu, Yuanyuan(吴渊源); Wang, Ding; Su, Juan; Liu, Jie; Yang, Wenxian(杨文献); Xiao, Meng; Tan, Wei; Lu, Shulong(陆书龙); Zhang, Jian
刊名	Superlattices and Microstructures
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5382]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
通讯作者	Lu SL(陆书龙)
推荐引用方式 GB/T 7714	Shi, Xiangyang,Wu, Yuanyuan,Wang, Ding,et al. Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness[J]. Superlattices and Microstructures,2017.
APA	Shi, Xiangyang.,Wu, Yuanyuan.,Wang, Ding.,Su, Juan.,Liu, Jie.,...&陆书龙.(2017).Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness.Superlattices and Microstructures.
MLA	Shi, Xiangyang,et al."Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness".Superlattices and Microstructures (2017).