Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers

	Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers
	He, Yang（何洋）; Sun, Yurun（孙玉润）; Zhao, Yongming（赵勇明); Yu, Shuzhen(于淑珍）; Dong, Jianrong（董建荣）; Dong JR(董建荣)
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5319]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
通讯作者	Dong JR(董建荣)
推荐引用方式 GB/T 7714	He, Yang,Sun, Yurun,Zhao, Yongming,et al. Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017.
APA	He, Yang,Sun, Yurun,Zhao, Yongming,Yu, Shuzhen,Dong, Jianrong,&董建荣.(2017).Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS.
MLA	He, Yang,et al."Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2017).