Dislocation distributions and tilts in Al(Ga) InAs reverse-graded layers grown on misorientated GaAs substrates

	Dislocation distributions and tilts in Al(Ga) InAs reverse-graded layers grown on misorientated GaAs substrates
	He, Yang（何洋）; Sun, Yu-run（孙玉润）; Zhao, Yongming（赵勇明）; Yu, Shuzhen（于淑珍）; Dong, Jianrong（董建荣）; Dong JR(董建荣)
刊名	CHINESE PHYSICS B
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5354]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
通讯作者	Dong JR(董建荣)
推荐引用方式 GB/T 7714	He, Yang,Sun, Yu-run,Zhao, Yongming,et al. Dislocation distributions and tilts in Al(Ga) InAs reverse-graded layers grown on misorientated GaAs substrates[J]. CHINESE PHYSICS B,2017.
APA	He, Yang,Sun, Yu-run,Zhao, Yongming,Yu, Shuzhen,Dong, Jianrong,&董建荣.(2017).Dislocation distributions and tilts in Al(Ga) InAs reverse-graded layers grown on misorientated GaAs substrates.CHINESE PHYSICS B.
MLA	He, Yang,et al."Dislocation distributions and tilts in Al(Ga) InAs reverse-graded layers grown on misorientated GaAs substrates".CHINESE PHYSICS B (2017).