High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition

	High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition
	Sun, Yurun(孙玉润); Dong, Jianrong(董建荣); Yu, Shuzhen(于淑珍); Zhao, Yongming(赵勇明); He, Yang(何洋); Sun YR(孙玉润); Dong JR(董建荣)
刊名	Journal of Materials Science: Materials in Electronics
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5434]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
通讯作者	Sun YR(孙玉润); Dong JR(董建荣)
推荐引用方式 GB/T 7714	Sun, Yurun,Dong, Jianrong,Yu, Shuzhen,et al. High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition[J]. Journal of Materials Science: Materials in Electronics,2017.
APA	Sun, Yurun.,Dong, Jianrong.,Yu, Shuzhen.,Zhao, Yongming.,He, Yang.,...&董建荣.(2017).High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition.Journal of Materials Science: Materials in Electronics.
MLA	Sun, Yurun,et al."High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition".Journal of Materials Science: Materials in Electronics (2017).