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	Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes
	Chen, P.; Zhao, D. G.; Jiang, D. S.; Long, H.; Li, M.; Yang, J.; Zhu, J. J.; Liu, Z. S.; Li, X. J.; Liu, W.
刊名	AIP ADVANCES
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5366]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Chen, P.,Zhao, D. G.,Jiang, D. S.,et al. Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes[J]. AIP ADVANCES,2017.
APA	Chen, P..,Zhao, D. G..,Jiang, D. S..,Long, H..,Li, M..,...&Yang, H..(2017).Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes.AIP ADVANCES.
MLA	Chen, P.,et al."Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes".AIP ADVANCES (2017).

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