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题名	基于激光热模光刻效应的微纳结构制备及图形转移
作者	俞小哲
文献子类	硕士
导师	魏劲松
关键词	激光热模光刻 laser heat-mode lithography 激光直写 laser direct writing Ge2Sb2Te5 Ge2Sb2Te5 纳米压印模板 template ITO电极 ITO electrode
其他题名	Micro/nano-structure fabrication and graphic transfer through laser thermal lithography effect
英文摘要	半导体集成电路，光电器件等对微纳图形结构制备的需求使得光刻技术越来越重要。激光直写热模光刻作为一种新型的光刻技术，具有分辨率高，成本低，操作简便等优点，极具应用前景。本文系统深入地研究了Ge2Sb2Te5硫系相变材料的激光热模光刻特性。通过使用不同的刻蚀液对激光直写后的Ge2Sb2Te5材料进行湿法刻蚀，Ge2Sb2Te5材料将呈现不同的正负光刻胶特性，并分析了其机理。在两种不同的刻蚀液下Ge2Sb2Te5材料形成的微纳图形结构均轮廓清晰，平整。使用25wt%浓度的四甲基氢氧化铵水溶液进行湿法刻蚀，Ge2Sb2Te5材料非晶态与晶态的选择性刻蚀比达到32，并呈现负性光刻胶的特性，通过调节激光曝光功率等刻写参数，最终制备得到314 nm的最小线宽，小于800 nm的刻写光斑。使用1wt%浓度的氢氧化钾溶液进行湿法刻蚀，Ge2Sb2Te5材料晶态与非晶态的选择性刻蚀比达到7，并呈现正性光刻胶的特性，通过调节激光曝光功率等刻写参数，最终制备得到276 nm的最小线宽，小于800 nm的刻写光斑。 系统深入地研究了Ge2Sb2Te5硫系相变材料作为激光热模光刻胶在激光直写热模光刻形成微纳图形结构后的图形转移应用。通过调节微电铸的工艺参数，在形成微纳图形结构的Ge2Sb2Te5薄膜上磁控溅射导电膜后微电铸制备得到最小线宽为253 nm的高分辨率镍金属纳米压印模板。通过使用0.5 mol/L盐酸溶液作为刻蚀液，利用上层带有微纳图形结构的Ge2Sb2Te5薄膜作为掩模，对ITO薄膜进行湿法刻蚀形成特定的图形结构，然后使用硫化铵溶液作为清洗液去掉上层的Ge2Sb2Te5掩模，最终得到的ITO薄膜的图形结构清晰平整。通过Ge2Sb2Te5激光热模光刻材料在镍金属纳米压印模板和ITO电极制备中的应用，为激光热模光刻更深入的研究和更广泛的应用奠定了基础。; Requirements for micro/nano-structure fabrication of semiconductor integrated circuits and optoelectronic devices make lithography more and more important. As a new lithography technology, laser heat-mode lithography technology has many advantages, such as high resolution, low cost and easy operation. The laser heat-mode lithography characteristics of Ge2Sb2Te5 chalcogenide are systematically studied in this work. By using different etching solutions for the developing, the Ge2Sb2Te5 material shows the both positive and negative photoresist characteristics, and the micro/nano-pattern structures on the Ge2Sb2Te5 thin films are clear and smooth. When the 25wt% concentration of tetramethylammonium hydroxide(TMAH) aqueous solution is used for developing, the selectivity of the amorphous and crystalline states of Ge2Sb2Te5 thin films is 32 and shows negative photoresist characteristic. By adjusting the writing parameters, such as the power of laser exposure, the minimum linewidth is 314 nm, which is smaller than the writing spot size of about 800 nm. When the 1wt% concentration of potassium hydroxide(KOH) solution is used for developing, the selectivity of the amorphous and crystallinestates of Ge2Sb2Te5 material is 7 and shows the positive photoresist characteristic. By adjusting the writing parameters, such as the power of laser exposure, the minimum linewidth is 276 nm, which is smaller than the writing spot size of about 800 nm. The pattern transfer of laser heat-mode lithography is also studied. A micro/nano-structure nickel template with a minimum line-width of 253 nm is prepared by micro-electroforming technique, where the Ge2Sb2Te5 thin film is used as the laser heat-mode resist. The micro/nano-structures on the Ge2Sb2Te5 resists are also transferred to ITO thin films through using 0.5 mol/L hydrochloric acid(HCl) solution as the developing solution, the Ge2Sb2Te5 mask is removed by ammonium sulphide solution as the cleaning solution. The fabricated structures on the ITO thin films are clear and smooth. This work provides a good basis for further research and application of laser heat-mode lithography.
学科主题	材料工程
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/31121]
专题	中国科学院上海光学精密机械研究所
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	俞小哲. 基于激光热模光刻效应的微纳结构制备及图形转移[D].

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