Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出

	Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures
	Li, J. P.; G. Q. Miao; Y. G. Zeng; Z. W. Zhang; D. B. Li; H. Song; H. Jiang; Y. R. Chen; X. J. Sun and Z. M. Li
刊名	Crystengcomm
	2017
卷号	19 期号:1
英文摘要	Large lattice mismatched heterostructures In0.78Ga0.22As/GaAs were grown with a low-temperature (LT) InGaAs buffer. Misfit dislocation arrays were observed at the LT-buffer/GaAs interfaces. Transmission electron microscopy (TEM) was used to investigate the microstructures of the heterointerfaces. The relationship between misfit dislocations and strain relaxation at the interface was analysed. It was found that strain redistribution gives rise to the discrepancy of interfacial structure and misfit strain relaxation for different samples. The experimental results are in favor of the conclusion and confirm the analysis we proposed.
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/59005]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li, J. P.,G. Q. Miao,Y. G. Zeng,et al. Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures[J]. Crystengcomm,2017,19(1).
APA	Li, J. P..,G. Q. Miao.,Y. G. Zeng.,Z. W. Zhang.,D. B. Li.,...&X. J. Sun and Z. M. Li.(2017).Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures.Crystengcomm,19(1).
MLA	Li, J. P.,et al."Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures".Crystengcomm 19.1(2017).