Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain

doi:10.1021/acsami.8b00791

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain
	Zhao, JL ; Guo, HZ ; He, X ; Zhang, QH ; Gu, L ; Li, XL ; Jin, KJ ; Yang, TY ; Ge, C ; Luo, Y
刊名	ACS APPLIED MATERIALS & INTERFACES
	2018
卷号	10 期号:12 页码:10211-10219
关键词	Oxide Fuel-cells Transition-metal Oxides Phase-transformation Oxygen Vacancies Perovskite Cathode Srcoo3-delta Diffraction Co3o4
ISSN号	1944-8244
DOI	10.1021/acsami.8b00791
文献子类	期刊论文
英文摘要	Structure determines material's functionality, and strain tunes the structure. Tuning the coherent epitaxial strain by varying the thickness of the films is a precise route to manipulate the functional properties in the low-dimensional oxide materials. Here, to explore the effects of the coherent epitaxial strain on the properties of SrCoO2.5 thin films, thickness-dependent evolutions of the structural properties and electronic structures were investigated by X-ray diffraction, Raman-spectra, optical absorption spectra, scanning transmission electron microscopy (STEM), and first principles calculations. By increasing the thickness of the SrCoO2.5 films, the c-axis lattice constant decreases, indicating the relaxation of the coherent epitaxial strain. The energy band gap increases and the Raman spectra undergo a substantial softening with the relaxation of the coherent epitaxial strain. From the STEM results, it can be concluded that the strain causes the variation of the oxygen content in the BM-SCO2.5 films, which results in the variation of band gaps with varying the strain. First-principles calculations show that strain-induced changes in bond lengths and angles of the octahedral CoO6 and tetrahedral CoO4 cannot explain the variation band gap. Our findings offer an alternative strategy to manipulate structural and electronic properties by tuning the coherent epitaxial strain in transition-metal oxide thin films.
语种	英语
WOS记录号	WOS:000428972700037
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/29066]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Zhao, JL 2.Guo, HZ 3.He, X 4.Zhang, QH 5.Gu, L 6.Li, XL 7.Jin, KJ 8.Yang, TY 9.Ge, C 10.Luo, Y
推荐引用方式 GB/T 7714	Zhao, JL,Guo, HZ,He, X,et al. Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(12):10211-10219.
APA	Zhao, JL.,Guo, HZ.,He, X.,Zhang, QH.,Gu, L.,...&Ibrahim, K.(2018).Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain.ACS APPLIED MATERIALS & INTERFACES,10(12),10211-10219.
MLA	Zhao, JL,et al."Manipulating the Structural and Electronic Properties of Epitaxial SrCoO2.5 Thin Films by Tuning the Epitaxial Strain".ACS APPLIED MATERIALS & INTERFACES 10.12(2018):10211-10219.