Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric

doi:10.1103/PhysRevB.95.020503

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric
	Lei, B; Wang, NZ; Shang, C; Meng, FB; Ma, LK; Luo, XG; Wu, T; Sun, Z; Wang, Y; Jiang, Z
刊名	PHYSICAL REVIEW B
	2017
卷号	95 期号:2 页码:-
ISSN号	2469-9950
DOI	10.1103/PhysRevB.95.020503
文献子类	期刊论文
英文摘要	We have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with T-c similar to 46.6 K for optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, by using a solid ion conductor as the gate dielectric, the SIC-FET device is able to induce much higher carrier doping in the bulk, suit many surface-sensitive experimental probes, and stabilize structural phases that are inaccessible in ordinary conditions.
语种	英语
WOS记录号	WOS:000400593700001
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/27490]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Lei, B,Wang, NZ,Shang, C,et al. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric[J]. PHYSICAL REVIEW B,2017,95(2):-.
APA	Lei, B.,Wang, NZ.,Shang, C.,Meng, FB.,Ma, LK.,...&Chen, XH.(2017).Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric.PHYSICAL REVIEW B,95(2),-.
MLA	Lei, B,et al."Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric".PHYSICAL REVIEW B 95.2(2017):-.